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SMA Power Schottky Diode 150V 1A / Schottky Diode Smd For Switch Mode Power Supplies

Categories Schottky Barrier Diode
Brand Name: CANYI
Model Number: STPS1150A
Certification: RoHS
Place of Origin: Guangdong, China
MOQ: Negotiable
Price: Negotiable
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000PCS Per Day
Delivery Time: 1 - 2 Weeks
Packaging Details: Dimensions per Unit:19 × 6.3 × 24 Centimeter • Weight per Unit:100grams • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.42 × 0.33 × 0.24 Meters • Export Carton Weight:3 Kilograms
Application: switch mode power supplies
Package: SMA/DO-41
Package type: smd diode
Forward voltage drop: 0.62-0.75v
IF(AV): 1A
Tstg: -65 to + 175°C
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SMA Power Schottky Diode 150V 1A / Schottky Diode Smd For Switch Mode Power Supplies

SMA power schottky diode 150V 1A schottky diode smd for switch mode power supplies


high voltage schottky diode features:


  1. Negligible switching losses
  2. Low forward voltage drop for higher efficiency and extended battery life
  3. Low thermal resistance
  4. Surface mount miniature package
  5. Avalanche capability

low barrier schottky diode application:

  1. Switching diode
  2. SMPS
  3. DC/DC converter
  4. Telecom power

silicon carbide schottky diode description:
This 150 V power Schottky rectifier is ideal for switch mode power supplies on up to 24 V rails and high frequency converters.
Packaged in SMA, SMA Flat Notch and axial, it is optimized for use in consumer and computer applications where low drop forward voltage is required to reduce power dissipation.

schottky barrier diode Dimension:


Absolute ratings (limiting values, at 25 °C, unless otherwise specified)


Symbol

Parameter


Value

UnitUnit


VRRM


Repetitive peak reverse voltage


150V

IF(RMS)


Forward rms current


15A

IF(AV)


Average forward current δ =

0.5, square wave


SMA


TL = 150 °C


1A

SMA Flat Notch


TL = 160 °C


DO-41


TL = 150 °C


IFSM


Surge non repetitive forward

current


SMA


tp = 10 ms sinusoidal


50


A

SMA Flat Notch


50


DO-41


75

PARM


Repetitive peak avalanche

power


tp = 10 µs, Tj= 125 °C


108W

Tstg


Storage temperature range


-65 to + 175


°C


Tj


Maximum operating junction temperature (1)


+ 175

°C


1. (dPtot/dTj ) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.


Static electrical characteristics


Symbol

Parameter


Test conditions


Typ


Max.


Unit


IR (1)


Reverse leakage

current


Tj = 25 °C


VR = VRRM


0.2


1.0

µA


Tj =1 25 °C


0.21.0

mA


VF (2)


Forward voltage

drop


Tj = 25 °C


IF = 1 A


0.780.82V

Tj = 125 °C


0.620.67

Tj = 25 °C


IF = 2 A


0.850.89

Tj = 125 °C


0.690.75

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation: P = 0.59 x IF(AV) + 0.08 IF2 (RMS)


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Our Strict Quality Control:


1. Our quality controller has working in our factory for more than 10 years, very expericed.


2. We will test the each product, each accessory before shipping, to make sure its high quality.


3. We will pack the cargo well to make sure the goods in good status during delivery.


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