| Sign In | Join Free | My qualitytoyschina.com |
|
| Sign In | Join Free | My qualitytoyschina.com |
|
| Categories | High Power MOSFET |
|---|---|
| Brand Name: | Infineon |
| Model Number: | IPD90R1K2C3 |
| Place of Origin: | CHINA |
| MPN: | IPD90R1K2C3 |
| MFR: | Infineon |
| Category: | Mosfet |
| Size: | 2.41*6.73*6.22mm |
| MOQ: | package qty |
| Price: | contact sales for updated price |
| Packaging Details: | tape and reel |
| Delivery Time: | 2 weeks |
| Payment Terms: | T/T |
| Supply Ability: | 1000+ |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Configuration | Single |
| Process Technology | CoolMOS |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 900 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 5.1 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain Source Resistance (MOhm) | 1200@10V |
| Typical Gate Charge @ Vgs (nC) | 28@10V |
| Typical Gate Charge @ 10V (nC) | 28 |
| Typical Input Capacitance @ Vds (pF) | 710@100V |
| Maximum Power Dissipation (mW) | 83000 |
| Typical Fall Time (ns) | 40 |
| Typical Rise Time (ns) | 20 |
| Typical Turn-Off Delay Time (ns) | 400 |
| Typical Turn-On Delay Time (ns) | 70 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Pin Count | 3 |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Mounting | Surface Mount |
| Package Height | 2.41(Max) |
| Package Length | 6.73(Max) |
| Package Width | 6.22(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Lead Shape | Gull-wing |
|
High Power MOSFET NVTFS6H860N
Single N-Channel Power MOSFET 80V 33A 21.1mΩ
High Power MOSFET NVH4L110N65S3F
SUPERFET III MOSFET 650V 110mohm
High Power MOSFET NTMTS0D4N04CL
Single N-Channel 40V 553.8A 0.4mΩ PQFN 8x8
High Power MOSFET NTLJS17D0P03P8Z
30V Single P-Channel, Power Clip22
High Power MOSFET FQPF27N25
N-Channel QFET® 250 V, 14 A, 110 mΩ, TO-220F
High Power MOSFET FDS8447
N-Channel PowerTrench® MOSFET 40V, 12.8A, 10.5mΩ
High Power MOSFET FDMA905P
Single P-Channel PowerTrench® MOSFET -12V, -10A, 16mΩ
High Power MOSFET FDC3512
N-Channel PowerTrench® MOSFET 80V 3.0A, 77mΩ
High Power MOSFET BSS138LT
Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω
High Power MOSFET NVMFS5C682NL
Single N-Channel Power MOSFET 60V, 25A, 21mΩ
