| Sign In | Join Free | My qualitytoyschina.com |
|
| Sign In | Join Free | My qualitytoyschina.com |
|
| Categories | Indium Phosphide Wafer |
|---|---|
| Brand Name: | ZMSH |
| Model Number: | InSb Wafers |
| Certification: | ROHS |
| Place of Origin: | China |
| MOQ: | 25pcs |
| Price: | Negotiation |
| Payment Terms: | T/T |
| Delivery Time: | In 30 days |
| Packaging Details: | Customized Box |
| Material: | Undopped InSb Wafers |
| Diameter: | 3''(+/-0.3mm) |
| Thickness: | 500/600(+/-25um) |
| Conduction Type: | N |
| Lattice Constant: | 0.648nm |
| Fusing Point: | 527°C |
| Density: | 5.78g/cm3 |
| Molecular Weight: | 236.58 |
| Band Gap: | 0.17eV(300K) |
| Company Info. |
| SHANGHAI FAMOUS TRADE CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
Description:
1. Indium antimonide is a direct band gap semiconductor material that belongs to the infrared spectrum.
2. Indium antimonide (InSb) is a compound semiconductor material consisting of indium (In) and antimony (Sb) elements.
3. Indium antimonide also has high carrier mobility and low noise characteristics in high-speed electronics and low noise amplifiers.
4. Its chemical formula is InSb. Indium antimonide is an important semiconductor material with special electronic and optical properties,
so it has a wide range of applications in the field of optoelectronics and electronics.
5. In addition, indium antimonide can also be used in quantum effect devices, such as quantum well structures and quantum dot devices,
because of its excellent quantum properties, such as quantum limiting effects and quantum tuning properties.
1. Fast response: InSb detector has a fast response time and can
capture changes in infrared radiation signals in real time.
2. Low noise: InSb materials have low noise levels, which can
provide clear infrared images and accurate spectral information.
3. High sensitivity: InSb material has a high sensitivity in the
mid-infrared band, which can effectively detect and convert
infrared radiation.
4. Low temperature operation: InSb detectors usually need to work
at lower temperatures, usually below 77K (liquid nitrogen
temperature)
5. Wide band range: InSb materials have a wide range of infrared
radiation induction, which can cover the mid-infrared band (usually
2-5 microns) and part of the long-wave infrared band (up to about
10 microns).
Technical Parameters:
| Single crystal | InSb |
| Diameter | 2‘’ 3‘‘(+/-0.3mm) |
| Thickness | 500/600(+/-25um) |
| Dopant | None |
| Conduction type | N |
| Carrier concentration(cm-3) | <3E15 |
| Dislocation density(cm-2) | <2*10² |
| Lattice constant | 0.648nm |
| Molecular Weight | 236.58 |
| Fusing Point | 527°C |
| density | 5.78g/cm3 |
| Band Gap | 0.17eV(300K) |
| 0.23eV(80K) |
Applications:
| Infrared imagery | InSb crystal materials are widely used in infrared imaging. |
| High speed electronic device | due to their high carrier mobility and low electronic quality, can be used to manufacture high-speed electronic devices. |
| Spectrometers and optics | InSb crystal materials are widely used in the manufacture of
infrared radiation detectors. |
| Spectral analysis | InSb crystal materials can be used for infrared spectral analysis due to their transparency and high sensitivity in the infrared band. |
| Quantum well device | Using the quantum well structure of InSb chip, a series of quantum well devices can be manufactured |
| Radiation detection | InSb crystal materials are widely used in the manufacture of
infrared radiation detectors. |
| Thermoelectric material | InSb chips are able to convert thermal energy into electricity for applications, such as thermoelectric power generation and temperature measurement. |
Other related product:
SIC Wafers:
FAQ:
Q: What is the Certification of Te-InSb?
A: The Certification of Te-InSb is ROHS.
Q: What is the Brand Name of Te-InSb?
A: The Brand Name of Te-InSb is ZMSH.
Q: Where is the Place of Origin of Te-InSb?
A: The Place of Origin of Te-InSb is CHINA.
Q: What is the MOQ of Te-InSb at one time?
A: The MOQ of Te-InSb is 25pcs at one time.
|
Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application
Primary / Dummy Grade Indium Phosphide Wafer Thickness 350um For LD
GaSb
4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode
3.58 Density Mgo Substrate / Mgo Wafer Magnesium Oxide Crystal Substrate
N / P Type Germanium Wafer , Germanium Optics Plates Diameter 0.5 ~ 150mm
Ge Optical Plates Indium Phosphide Wafer Excellent Semiconductor Material
Germanium Single Crystals Indium Phosphide Wafer Customized Ge Optical Lens 4 / 6 Inch
Germanium Single Crystals Inp Wafers Semiconductor Substrates
Laser Diode InP Indium Phosphide Wafer 100mm Diameter Black Color
