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IRF640NSTRLPBF N Channel Mosfet Transistor 200V Surface Mount D2PAK

Categories Mosfet Power Transistor
Brand Name: IOR
Model Number: IRF640NSTRLPBF
Certification: CE
Place of Origin: CN
MOQ: 100 pieces
Price: negotiable
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 100Kpcs per year
Delivery Time: 1-2 working days
Packaging Details: Tape and Reel
Goods Condition: Brand New
Part Status: Active
Lead Free / Rohs: Complaint
Function: Mosfet
Mounting Type: Surface Mount
Package: D2PAK
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    IRF640NSTRLPBF N Channel Mosfet Transistor 200V Surface Mount D2PAK

    IRF640NSTRLPBF N-Channel Mosfet Transistor 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK


    Advanced Process Technology

    Dynamic dv/dt Rating 175°C Operating Temperature

    Fast Switching Fully Avalanche Rated

    Ease of Paralleling

    Simple Drive Requirements


    Description

    Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application.


    ManufacturerInfineon Technologies
    SeriesHEXFET®
    PackagingTape & Reel (TR)
    Part StatusActive
    FET TypeN-Channel
    TechnologyMOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)200V
    Current - Continuous Drain (Id) @ 25°C18A (Tc)
    Drive Voltage (Max Rds On, Min Rds On)10V
    Vgs(th) (Max) @ Id4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs67nC @ 10V
    Vgs (Max)±20V
    Input Capacitance (Ciss) (Max) @ Vds1160pF @ 25V
    FET Feature-
    Power Dissipation (Max)150W (Tc)
    Rds On (Max) @ Id, Vgs150 mOhm @ 11A, 10V
    Operating Temperature-55°C ~ 175°C (TJ)
    Mounting TypeSurface Mount
    Supplier Device PackageD2PAK
    Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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    Cheap IRF640NSTRLPBF N Channel Mosfet Transistor 200V Surface Mount D2PAK for sale
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