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Electronic Purity Plus Specialty Gases C4F6 For TFT - LCD Manufacturing

Categories Electronic Gases
Brand Name: Newradar Gas
Model Number: N/M
Certification: ISO9001
Place of Origin: China
MOQ: 100 KGS
Price: negotiation
Payment Terms: Western Union, L/C, T/T
Supply Ability: 50TON
Delivery Time: 7-10 DAYS
Packaging Details: 30lb - 926L Cylinder package
Odor:: Odorless
Color: colorless
Air & Water Reactions: HIGHLY FLAMMABLE GAS. VERY TOXIC. VERY TOXIC BY INHALATION. RISK OF EXPLOSION IF HEATED UNDER CONFENEMENT.
Cylinders certificate:: GB, ISO, CE, DOT
Supply Ability:: 30 ton per month
Application:: Semi Industry
Package:: 30-1000kg/per cylinder
Cylinders volume:: 30LB,50LB disposable cylinder
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    Electronic Purity Plus Specialty Gases C4F6 For TFT - LCD Manufacturing

    Electronic Specialty Gases C4F6 Used During Semiconductor Fabrication And The manufacturing of TFT-LCDs


    Description:


    C4F6 is a new environmentally friendly, high-performance , etch chemistry for its Dielectric Etch IPS(TM) Centura(R) and Dielectric Etch Super e(TM) Centura systems. The C4F6 gas can provides higher etch rates, better profile control and higher selectivity to photoresist in critical dielectric etch applications.


    C4F6 gas improves dielectric etch process results in key areas such as copper dual damascene, self-aligned contact and high aspect ratio contact etch applications, including low K materials. It also exhibits significant environmental benefits over current etch chemistries.

    The semiconductor industry has been investigating new gas chemistries in an effort to reduce global warming emissions. In addition to improving etch process performance, C4F6 gas features low global warming emissions and zero ozone depletion potential.



    High Pressure Gas
    Molecular Weight162.03
    UN Code3160
    Permissible ConcentrationUnsettled(Reference value5ppm)
    DescriptionColorless Gas
    OdorOdorless
    Specific Gravity5.892
    Boiling Point5.5℃
    Density(Liquid)1.44kg/ℓ(15℃)

    Applications:


    1. C:F ratio in C4F6molecule is high enough to control the amount of polymer on the chamber surface and wafer surface with respect to F etching radicals so achieving superior results over other gases to produce vertical profile. More important, its intrinsic characteristics allow high selectivity to substrate or photoresist and wider process window compared to C4F8.


    2. This behaviour is particularly beneficial to address the need for sub 0.25 m requirements. Ar is being used as a carrier gas but nitride selectivity results a decreasing function for Ar.

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